View msd40p45 detailed specification:
MSD40P45 P-Channel 40-V (D-S) MOSFET Description Graphic Symbol The device is using trench DMOS technology. This advanced technology has been especially tailored to minimize R , provide superior switching performance, DS(ON) and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. The device meets the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. Features Package Dimension l R =15m @ V =-10V DS(ON) GS l Fast switching l Suit for -4.5V Gate Drive Applications l 100% EAS Guaranteed l Green Device Available Typical Applications l MB / VGA / Vcore l POL Applications l Load Switch l LED Applications Millimeter Millimeter REF. REF. Package type TO-252 Min. Nom. Max. Min. Nom. Max. A 2.20 2.30 ... See More ⇒
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BJT: ZDT6705 | GA1L4Z | GA1A4M | SBT42 | 2SA200-Y | 2SA200-O
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