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View 2n3789 2n3790 2n3791 2n3792 detailed specification:

DATA SHEET 2N3789 2N3790 2N3791 2N3792 PNP POWER TRANSISTORS JEDEC TO-3 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3789 Series types are silicon power transistors manufactured by the epitaxial planar process and designed for medium speed switching and amplifier applications. MAXIMUM RATINGS (TC=25 C unless otherwise noted) 2N3789 2N3790 SYMBOL 2N3791 2N3792 UNITS Collector-Base Voltage VCBO 60 80 V Collector-Emitter Voltage VCEO 60 80 V Emitter-Base Voltage VEBO 7.0 V Collector Current IC 10 A Base Current IB 4.0 A Power Dissipation PD 150 W Operating and Storage Junction Temperature TJ,Tstg -65 to +200 C Thermal Resistance JC 1.17 C/W ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) 2N3789 2N3790 2N3791 2N3792 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS ICEV VCE= Rated VCEO, VEB=1.5V 1.0 1.0 mA ICEV VCE= Rated VCEO,... See More ⇒

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