View cec2533 detailed specification:

cec2533cec2533

CEC2533 N-Channel Enhancement Mode Field Effect Transistor FEATURES D 25V, 44A, RDS(ON) = 8 mW @VGS = 10V. RDS(ON) = 13 mW @VGS = 4.5V. Super High dense cell design for extremely low RDS(ON). G High power and current handing capability. RoHS compliant. S D D D D G S S S DFN3*3 ABSOLUTE MAXIMUM RATINGS TC = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 25 V Gate-Source Voltage VGS 20 V Drain Current-Continuous@RqJc ID 44 A @RqJA ID 14 A Drain Current-Pulsed a@RqJc IDM 176 A @RqJA IDM 56 A Maximum Power Dissipation PD 25 W Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-Case b RqJc 5 C/W Thermal Resistance, Junction-to-Ambient b RqJA 50 C/W Rev 2. 2017.Dec Details are subject to change without notice . http //www.cet-... See More ⇒

 

Keywords - ALL TRANSISTORS SPECS

 cec2533.pdf Design, MOSFET, Power

 cec2533.pdf RoHS Compliant, Service, Triacs, Semiconductor

 cec2533.pdf Database, Innovation, IC, Electricity