View ced3133 ceu3133 detailed specification:

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CED3133/CEU3133 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -35A, RDS(ON) = 16mW @VGS = -10V. RDS(ON) = 27mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D RoHS compliant. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Rating Units Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS V 25 Drain Current-Continuous ID -35 A Drain Current-Pulsed a IDM -140 A Maximum Power Dissipation @ TC = 25 C 31 W PD - Derate above 25 C 0.25 W/ C Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-Case RqJC 4 C/W Thermal Resistance, Junction-to-Ambient RqJA 50 C/W Rev 2. 201... See More ⇒

 

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 ced3133 ceu3133.pdf Design, MOSFET, Power

 ced3133 ceu3133.pdf RoHS Compliant, Service, Triacs, Semiconductor

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