All Transistors. Equivalents Search

View cem3032 detailed specification:

CEM3032 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 18A, RDS(ON) = 4.8m @VGS = 10V. RDS(ON) = 6.8m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 V Drain Current-Continuous ID 18 A Drain Current-Pulsed a IDM 72 A Maximum Power Dissipation PD 2.5 W Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-Ambient b R JA 50 C/W This is preliminary information on a new product in development now . Rev 1. 2009.Oct Details are subject to... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 cem3032.pdf Design, MOSFET, Power

 cem3032.pdf RoHS Compliant, Service, Triacs, Semiconductor

 cem3032.pdf Database, Innovation, IC, Electricity