View cem3139 detailed specification:

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CEM3139 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 20V, 9A, RDS(ON) = 16m @VGS = 4.5V. RDS(ON) = 20m @VGS = 2.5V. -30V, -6A, RDS(ON) = 34m @VGS = -10V. RDS(ON) = 52m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). D1 D1 D2 D2 High power and current handing capability. 8 7 6 5 RoHS compliant. Surface mount Package. SO-8 1 1 2 3 4 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol N-Channel P-Channel Units Drain-Source Voltage VDS 20 -30 V Gate-Source Voltage VGS 12 12 V Drain Current-Continuous ID 9 -6 A Drain Current-Pulsed a IDM 36 -24 A Maximum Power Dissipation PD 2.0 W Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-Ambient b R JA 62.5 C/W Rev 2. 20... See More ⇒

 

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 cem3139.pdf Design, MOSFET, Power

 cem3139.pdf RoHS Compliant, Service, Triacs, Semiconductor

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