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View cem4953h detailed specification:

CEM4953H Dual P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -4.5A, RDS(ON) = 64m @VGS = -10V. RDS(ON) = 95m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D1 D1 D2 D2 Lead-free plating ; RoHS compliant. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS 20 V Drain Current-Continuous ID -4.5 A Drain Current-Pulsed a IDM -18 A Maximum Power Dissipation PD 2.0 W Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-Ambient b R JA 62.5 C/W This is preliminary information on a new product in development now . Rev 1. 2012.... See More ⇒

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