View cem4953h datasheet:

CEM4953HDual P-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES-30V, -4.5A, RDS(ON) = 64m @VGS = -10V. RDS(ON) = 95m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D1 D1 D2 D2Lead-free plating ; RoHS compliant.8 7 6 5Surface mount Package.SO-81 2 3 41S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source Voltage VDS -30 VGate-Source Voltage VGS 20 VDrain Current-Continuous ID -4.5 ADrain Current-Pulsed a IDM -18 AMaximum Power Dissipation PD 2.0 WOperating and Store Temperature Range TJ,Tstg -55 to 150 CThermal CharacteristicsParameter Symbol Limit UnitsThermal Resistance, Junction-to-Ambient b RJA 62.5 C/WThis is preliminary information on a new product in development now . Rev 1. 2012.

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 cem4953h.pdf Design, MOSFET, Power

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