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CEP85A3/CEB85A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 25V, 90A, RDS(ON) = 6m @VGS = 10V. RDS(ON) = 9m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-263 & TO-220 package. G CEB SERIES CEP SERIES S TO-263(DD-PAK) TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 25 V Gate-Source Voltage VGS 20 V Drain Current-Continuous ID 90 A Drain Current-Pulsed a IDM 360 A Maximum Power Dissipation @ TC = 25 C 89 W PD - Derate above 25 C 0.71 W/ C Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-Case R JC 1.4 C/W Thermal Resistance, Junction-to-Ambient R JA 50 C/W Rev 1. 2005.... See More ⇒

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