View cep85a3 ceb85a3 datasheet:

CEP85A3/CEB85A3N-Channel Enhancement Mode Field Effect TransistorFEATURES25V, 90A, RDS(ON) = 6m @VGS = 10V. RDS(ON) = 9m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-263 & TO-220 package.GCEB SERIESCEP SERIESSTO-263(DD-PAK)TO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source Voltage VDS 25 VGate-Source Voltage VGS 20 VDrain Current-Continuous ID 90 ADrain Current-Pulsed a IDM 360 AMaximum Power Dissipation @ TC = 25 C 89 WPD- Derate above 25 C 0.71 W/ COperating and Store Temperature Range TJ,Tstg -55 to 150 CThermal CharacteristicsParameter Symbol Limit UnitsThermal Resistance, Junction-to-Case RJC 1.4 C/WThermal Resistance, Junction-to-Ambient RJA 50 C/WRev 1. 2005.

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