View cez2r05 detailed specification:

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CEZ2R05 N-Channel Enhancement Mode Field Effect Transistor FEATURES 25V, 73A, RDS(ON) = 7m W @VGS = 10V. D D D D RDS(ON) = 11mW @VGS = 4.5V. 8 7 6 5 Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. Surface mount Package. 1 2 3 4 S S S G P-PAK 5X6 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 25 V Gate-Source Voltage VGS 20 V Drain Current-Continuous ID @ RqJA 25 A Drain Current-Continuous ID @RqJC 73 A Drain Current-Pulsed a IDM @RqJA 100 A Drain Current-Pulsed a IDM @RqJC 292 A Maximum Power Dissipation PD 60 W Single Pulsed Avalanche Energy e EAS 60.5 mJ IAS A Single Pulsed Avalanche Current e 11 Operating and Store Temperature Range TJ,Tstg -55 to 175 C Thermal Characteristics Parameter Symbol Limit Units Thermal R... See More ⇒

 

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 cez2r05.pdf Design, MOSFET, Power

 cez2r05.pdf RoHS Compliant, Service, Triacs, Semiconductor

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