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View a1015s detailed specification:

A1015S PNP Silicon PNP Transistors APPLICATION Low Frequency Amplifier Applications. MAXIMUM RATINGS Ta=25 PARAMETER SYMBOL RATING UNIT VCBO -50 V Collector-base voltage VCEO -50 V Collector-emitter voltage VEBO -5 V Emitter-base voltage IC -0.15 A Collector current PC 0.3 Collector Power Dissipation W Tj 150 Junction Temperature Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS Ta=25 RG=10 PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITION Collector-Base Breakdown Voltage BVCBO -50 V IC=-20uA IE=0 Collector-Emitter Breakdown Voltage BVCEO -50 V IC=-1mA IB=0 Emitter-Base Breakdown Voltage BVEBO IE=-20uA IC=0 -5 V Collector Cut-off Current ICBO VCB=-50V IE=0 -0.1 uA Emitter Cut-off Current IEBO VEB=-5V IC=0 -0.1 uA Collector-Emitter Saturation Volta... See More ⇒

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