View bpm0306cg detailed specification:
BPM0306CG 30V Complementary MOSFET General Description Application The BPM0306CG uses advanced trench technology to H-bridge provide excellent R and low gate charge. The Inverters DS(ON) complementary MOSFETs can be used in a wide variety of applications. Features N-Channel V =30V, I =6.5A DS D R ... See More ⇒
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BJT Parameters and How They Relate
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BJT: ZDT6705 | GA1L4Z | GA1A4M | SBT42 | 2SA200-Y | 2SA200-O
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