View bc1012 detailed specification:

bc1012bc1012

Plastic-Encapsulate MOSFETS N-CHANNEL ENHANCEMENT MODE MOSFET Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) ESD Protected up to 2kV Marking Code NA1 Maximum Ratings @T = 25 C unless otherwise specified A Characteristic Symbol Value Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage 6 V TA = 25 C Steady 0.63 Continuous Drain Current (Note 1) A I D State TA = 85 C 0.45 IDM Pulsed Drain Current 6 A Thermal Characteristics @T = 25 C unless otherwise specified A Characteristic Symbol Value Units Total Power Dissipation (Note 1) P 0.28 W D R Thermal Resistance, Junction to Ambient JA 452 C/W TJ, -55 to Operating and Storage Temperature Range C TSTG +150 Notes 1. Device mounte... See More ⇒

 

Keywords - ALL TRANSISTORS SPECS

 bc1012.pdf Design, MOSFET, Power

 bc1012.pdf RoHS Compliant, Service, Triacs, Semiconductor

 bc1012.pdf Database, Innovation, IC, Electricity