View bc3407 detailed specification:

bc3407bc3407

SOT-23 Plastic-Encapsulate MOSFETS P-Channel Enhancement Mode Field Effect Transistor General Description SOT-23 The BC3407 uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for use as a load switch or in PWM applications. 1. GATE 2. SOURCE 3. DRAIN MARKING 3407 Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS 20 V Continuous Drain Current ID -4.1 A Power Dissipation PD 350 mW Thermal Resistance from Junction to Ambient R JA 357 /W Junction Temperature TJ 150 Storage Temperature Tstg -55 +150 1 of 4 Copyright All right reserved Heyuan China Base Electronics Technology Co., Ltd. Electrical characteristics (Ta=25 unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Units Sta... See More ⇒

 

Keywords - ALL TRANSISTORS SPECS

 bc3407.pdf Design, MOSFET, Power

 bc3407.pdf RoHS Compliant, Service, Triacs, Semiconductor

 bc3407.pdf Database, Innovation, IC, Electricity