View s8550 detailed specification:
S8550 S8550 PNP Transistors General description SOT-23 Plastic-Encapsulate Transistors FEATURES Complementary to S8050 Power Dissipation of 300mW High Stability and High Reliability MECHANICAL DATA SOT-23 Small Outline Plastic Package Epoxy UL 94V-0 Mounting Position Any Marking 2TY Maximum Ratings & Thermal Characteristics TA = 25 C unless otherwise noted Parameters Symbol Value Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter -Base Voltage VEBO -5 V Collector Current-Continuous IC -500 mA Collector Power Dissipation PC 300 mW Junction Temperature Tj 150 Storage Temperature Tstg -55-+150 Thermal resistance From junction to ambient R JA 417 /W Electrical Characteristics TA = 25 C unless otherwise noted Limits Parameter Symbols Test Condition Unit Min... See More ⇒
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s8550.pdf Design, MOSFET, Power
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