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s8550s8550

S8550 S8550 PNP Transistors General description SOT-23 Plastic-Encapsulate Transistors FEATURES Complementary to S8050 Power Dissipation of 300mW High Stability and High Reliability MECHANICAL DATA SOT-23 Small Outline Plastic Package Epoxy UL: 94V-0 Mounting Position: Any Marking: 2TY Maximum Ratings & Thermal Characteristics TA = 25C unless otherwise noted Parameters Symbol Value Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter -Base Voltage VEBO -5 V Collector Current-Continuous IC -500 mA Collector Power Dissipation PC 300 mW Junction Temperature Tj 150 Storage Temperature Tstg -55-+150 Thermal resistance From junction to ambient RJA 417 /W Electrical Characteristics TA = 25C unless otherwise noted Limits Parameter Symbols Test Condition Unit Min

 

Keywords - ALL TRANSISTORS DATASHEET

 s8550.pdf Design, MOSFET, Power

 s8550.pdf RoHS Compliant, Service, Triacs, Semiconductor

 s8550.pdf Database, Innovation, IC, Electricity

 

 
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