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View 2sc4226-r23 2sc4226-r24 2sc4226-r25 detailed specification:

2SC4226 NPN Silicon Epitaxial Planar Transistor FEATURES Low noise. High gain. Power dissipation.(PC=150mW) APPLICATIONS High frequency low noise amplifier. SOT-323 ORDERING INFORMATION MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value Units Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage VCEO 12 V Emitter-Base Voltage VEBO 3 V Collector Current -Continuous IC 100 mA Collector Dissipation PC 150 mW Junction and Storage Temperature Tj,Tstg -65 to +150 Rev 2023A2 1 2SC4226 NPN Silicon Epitaxial Planar Transistor ELECTRICAL CHARACTERISTICS @ Ta=25 unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100 A,IE=0 20 V Collector-emitter breakdown V(BR)CEO IC=1mA,IB=0 12 V voltage Emitter-base breakdown voltage V(BR)EBO IE=... See More ⇒

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