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2sc4226-r23 2sc4226-r24 2sc4226-r25.pdf datasheet:

2sc4226-r23_2sc4226-r24_2sc4226-r252sc4226-r23_2sc4226-r24_2sc4226-r25

2SC4226NPN Silicon Epitaxial Planar TransistorFEATURES Low noise. High gain. Power dissipation.(PC=150mW) APPLICATIONS High frequency low noise amplifier. SOT-323 ORDERING INFORMATION MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value UnitsCollector-Base Voltage VCBO 20 VCollector-Emitter Voltage VCEO 12 VEmitter-Base Voltage VEBO 3 VCollector Current -Continuous IC 100 mACollector Dissipation PC 150 mWJunction and Storage Temperature Tj,Tstg -65 to +150 Rev:2023A2 1 2SC4226NPN Silicon Epitaxial Planar TransistorELECTRICAL CHARACTERISTICS @ Ta=25 unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNITCollector-base breakdown voltage V(BR)CBO IC=100A,IE=0 20 VCollector-emitter breakdown V(BR)CEO IC=1mA,IB=0 12 Vvoltage Emitter-base breakdown voltage V(BR)EBO IE=

 

Keywords - ALL TRANSISTORS DATASHEET

 2sc4226-r23 2sc4226-r24 2sc4226-r25.pdf Design, MOSFET, Power

 2sc4226-r23 2sc4226-r24 2sc4226-r25.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sc4226-r23 2sc4226-r24 2sc4226-r25.pdf Database, Innovation, IC, Electricity

 

 
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