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IRF640N N-Ch 200V Fast Switching MOSFETs Product Summary Super Low Gate Charge Green Device Available Excellent Cdv/dt effect decline BVDSS RDSON ID Advanced high cell density Trench 200V 170m 18A technology Description TO220 Pin Configuration The IRF640N is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The IRF640N meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. Absolute Maximum Ratings Symbol Parameter Rating Units V Drain-Source Voltage 200 V DS V Gate-Source Voltage 20 V GS I =25 Continuous Drain Current, V @ 10V1 18 A D@T GS C I =100 Continuous Drain Current, V @ 10V1 11.7 A D@T GS C I Pulsed Drain Current2 40 A ... See More ⇒

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