View irf640n datasheet:

IRF640NN-Ch 200V Fast Switching MOSFETs Product Summary Super Low Gate Charge Green Device Available Excellent Cdv/dt effect decline BVDSS RDSON ID Advanced high cell density Trench 200V 170m 18A technology Description TO220 Pin Configuration The IRF640N is the highest performance trenchN-ch MOSFETs with extreme high cell density,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The IRF640N meet the RoHS and GreenProduct requirement, 100% EAS guaranteed with full function reliability approved. Absolute Maximum Ratings Symbol Parameter Rating Units V Drain-Source Voltage 200 V DSV Gate-Source Voltage 20 V GSI =25 Continuous Drain Current, V @ 10V1 18 A D@T GSCI =100 Continuous Drain Current, V @ 10V1 11.7 A D@T GSCI Pulsed Drain Current2 40 A

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