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View s8550 detailed specification:

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD S8550 (T =25 ) a CHARACTERISTIC Symbol Rating Unit Collector-Base Voltage V -40 Vdc CBO - Collect-Emitter Voltage V -25 Vdc CEO - Emitter-Base Voltage V -5.0 Vdc EBO - Collector Current Ic -500 mAdc Collector Power Dissipation P 225 mW C Junction Temperature T 150 j Storage Temperature Range -55 150 T stg DEVICE MARKING S8550=2TY ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD S8550 ELECTRICAL CHARACTERISTICS (T =25 unless otherwise noted 25 ) A Characterstic Symbol Test Co... See More ⇒

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