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HMS10N60K/HMS10N60I HMS10N60K/HMS10N60I 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using H&M Semi s - 10A, 600V, RDS(on) typ. = 0.42 @VGS = 10 V Advanced Super-Junction technology. - Low gate charge ( typical 35nC) This advanced technology has been especially tailored - High ruggedness to minimize conduction loss, provide superior switching - Fast switching performance, and withstand high energy pulse in the - 100% avalanche tested avalanche and commutation mode. - Improved dv/dt capability These devices are well suited for AC/DC power conversion in switching mode operation for higher efficiency. D D I-PAK D-PAK G G S G D S S Absolute Maximum Ratings TC = 25 C unless otherwise noted Symbol Parameter HMS10N60K/HMS10N60I Units VDSS Drain-Source Voltage 600 V Drain Current - Continuous (T = 25 ) C 10 A I D - Continu... See More ⇒

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