View hms10n60k hms10n60i datasheet:

HMS10N60K/HMS10N60IHMS10N60K/HMS10N60I600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using H&M Semis - 10A, 600V, RDS(on) typ. = 0.42@VGS = 10 VAdvanced Super-Junction technology. - Low gate charge ( typical 35nC)This advanced technology has been especially tailored - High ruggednessto minimize conduction loss, provide superior switching - Fast switchingperformance, and withstand high energy pulse in the - 100% avalanche testedavalanche and commutation mode. - Improved dv/dt capabilityThese devices are well suited for AC/DC power conversion in switching mode operation for higher efficiency.DDI-PAKD-PAK GG SG D SSAbsolute Maximum Ratings TC = 25C unless otherwise notedSymbol Parameter HMS10N60K/HMS10N60I UnitsVDSS Drain-Source Voltage 600 V Drain Current - Continuous (T = 25)C 10 AID - Continu

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