All Transistors. Equivalents Search

View s8550l s8550h detailed specification:

R S8550 S E M I C O N D U C T O R TRANSISTOR(PNP) SOT-23 FEATURES Complimentary to S8050 1. BASE Collector current I =0.5A C 2. EMITTER 3. COLLECTOR MARKING 2TY MAXIMUM RATINGS (T =25 unless otherwise noted) A Symbol Parameter Value Units V Collector-Base Voltage -40 V CBO V Collector-Emitter Voltage -25 V CEO VEBO Emitter-Base Voltage -5 V I Collector Current -Continuous -0.5 A C P Collector Power Dissipation 0.3 W C T Junction Temperature 150 j Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT -40 V Collector-base breakdown voltage V(BR)CBO C -100 A, I =0 I = E Collector-emitter breakdown voltage V I =-1mA, I =0 -25 V (BR)CEO C B -5 V Emitter-base breakdown voltage V I = (BR)EBO E -100 A, I =0 C Collector cut-off current I V... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 s8550l s8550h.pdf Design, MOSFET, Power

 s8550l s8550h.pdf RoHS Compliant, Service, Triacs, Semiconductor

 s8550l s8550h.pdf Database, Innovation, IC, Electricity