View tip41a tip41b tip41c detailed specification:
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO. LTD TO-220 Plastic-Encapsulate Transistors TO-220 TIP41A/41B/41C TRANSISTOR (NPN) 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM 2 W (Tamb=25 ) 3. EMITTER Collector current ICM 6 A 1 2 3 Collector-base voltage V(BR)CBO TIP41A 60 V TIP41B 80 V TIP41C 100 V Operating and storage junction temperature range TJ, Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT 41A 60 Collector-base breakdown voltage 41B V(BR)CBO Ic= 1mA, I =0 80 V E 41C 100 41A 60 Collector-emitter breakdown voltage 41B V(BR)CEO Ic= 30mA, IB=0 80 V 41C 100 Emitter-base breakdown voltage V(BR)EBO I = 1mA, I =0 5 V E C 41A V =60V, I =0 CB E Collector cut-off current 41B I V =80V, I =0 0.4 mA CBO CB E... See More ⇒
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tip41a tip41b tip41c.pdf Design, MOSFET, Power
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