View tip41a tip41b tip41c datasheet:

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO. LTD TO-220 Plastic-Encapsulate Transistors TO-220 TIP41A/41B/41C TRANSISTOR (NPN) 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 2 W (Tamb=25) 3. EMITTER Collector current ICM: 6 A 1 2 3 Collector-base voltage V(BR)CBO: TIP41A : 60 V TIP41B : 80 V TIP41C : 100 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT 41A 60 Collector-base breakdown voltage 41B V(BR)CBO Ic= 1mA, I =0 80 VE 41C 100 41A 60 Collector-emitter breakdown voltage 41B V(BR)CEO Ic= 30mA, IB=0 80 V 41C 100 Emitter-base breakdown voltage V(BR)EBO I = 1mA, I =0 5 VE C 41A V =60V, I =0 CB ECollector cut-off current 41B I V =80V, I =0 0.4 mACBO CB E

Keywords - ALL TRANSISTORS DATASHEET

 tip41a tip41b tip41c.pdf Design, MOSFET, Power

 tip41a tip41b tip41c.pdf RoHS Compliant, Service, Triacs, Semiconductor

 tip41a tip41b tip41c.pdf Database, Innovation, IC, Electricity