All Transistors. Equivalents Search

View s8550 detailed specification:

S8550 S8550 TRANSISTOR (PNP) FEATURES SOT-23 Complimentary to S8050 Collector current IC=0.5A 1 BASE 2 EMITTER 3 COLLECTOR MARKING 2TY MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC = -100 A, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC =-1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE= -100 A, IC=0 -5 V Collector cut-off current ICBO VCB= -40V, IE=0 -0.1 A Collector cut-off curr... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 s8550.pdf Design, MOSFET, Power

 s8550.pdf RoHS Compliant, Service, Triacs, Semiconductor

 s8550.pdf Database, Innovation, IC, Electricity