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View irf630p detailed specification:

IRF630P www.VBsemi.tw N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY DT-Trench Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 0.270 at VGS =10V 10 200 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch TO-220AB D G S N-Channel MOSFET G D S Top View ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Parameter Symbol Limit Unit VDS Drain-Source Voltage 200 V VGS Gate-Source Voltage 20 TC = 25 C 10 ID Continuous Drain Current (TJ = 175 C)b TC = 125 C 6 IDM Pulsed Drain Current A 38 IS Continuous Source Current (Diode Conduction) 12 IAS Avalanche Current 10 Single Pulse Avalanche Energy L = 0.1 mH EAS 18 mJ TC = 25 C 121b PD Maximum Power Dissipation W TA = 25 C 2a TJ, Tstg Operating Junction and Storage Temper... See More ⇒

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