View irf630p datasheet:

IRF630Pwww.VBsemi.twN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY DT-Trench Power MOSFETVDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature0.270 at VGS =10V10200 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchTO-220ABDGSN-Channel MOSFETG D STop ViewABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Parameter Symbol Limit UnitVDSDrain-Source Voltage 200VVGSGate-Source Voltage 20TC = 25 C10IDContinuous Drain Current (TJ = 175 C)bTC = 125 C6IDMPulsed Drain Current A38ISContinuous Source Current (Diode Conduction) 12IASAvalanche Current 10Single Pulse Avalanche Energy L = 0.1 mH EAS18 mJTC = 25 C121bPDMaximum Power Dissipation WTA = 25 C2aTJ, TstgOperating Junction and Storage Temper

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