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View dh100p30d detailed specification:

DH100P30D -100V/33m /-35A P-MOSFET Features Key Parameters VDS Low on resistance -100V RDS(on)typ. Low reverse transfer capacitances 33m ID 100% single pulse avalanche energy test -35A Ciss@10V 100% VDS test 5250pF Pb-Free plating / Halogen-Free / RoHS compliant Qgd 19nC Applications Load switch TO-252 Marking & Packing Information Part # Package Marking Tube/Reel Qty(pcs) DH100P30D TO-252 DH100P30D Tape & Reel 2500/box Rev 1.0 Pg 1/7 DONGHAI Semiconductor DH100P30D -100V/33m /-35A P-MOSFET Absolute Maximum Ratings Parameter Symbol Value Unit VDS Drain-source voltage -100 V VGS Gate-Source voltage 20 V Continuous drain current ID TC = 25 A C -35 TC = 100 C -22 Pulsed drain current (TC = 25 ID pulse C, tp limited by Tjmax) -140 A EAS Avalanche energy, single pulse (L=0.5mH, Rg=25 )[... See More ⇒

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