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DH100P40D 40A 100V P-channel Enhancement Mode Power MOSFET 1 Description These P-channel enhanced vdmosfets, used V = -100V DSS advanced trench technology and design, provide to excellent Rdson with low gate charge. Which accords R =31m DS(on) (TYP) with the RoHS standard. I = -40A D 2 Features Fast switching Low on gate charge Low reverse Transfer capacitances 100% single pulse avalanche energy test 100% V test DS 3 Applications Suitable for motor drivers. Switching regulators Converters and relay drivers Alertor TO-252 4 Electrical Characteristics 4.1 Absolute Maximum Rating(Tc=25 ,unless otherwise noted) Parameter Symbol Value Units Drian-Source Voltage V -100 V DSS Gate-Drain Voltage V 20 V GSS T =25 -40 A C Drain Current(continuous) I D T =100 -28 A C Drain Current(Pulsed)( 1) I -160 A DM S... See More ⇒

 

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