View bss138 detailed specification:
RoHS COMPLIANT BSS138 N-Channel Enhancement Mode Field Effect Transistor Product Summary V 50V DS I 340mA D R ( at V =10V) 2.5ohm DS(ON) GS R ( at V =4.5V) 3.0ohm DS(ON) GS General Description Trench Power MV MOSFET technology Voltage controlled small signal switch Low input Capacitance Fast Switching Speed Low Input / Output Leakage Applications Battery operated systems Solid-state relays Direct logic-level interface TTL/CMOS Absolute Maximum Ratings (T =25 unless otherwise noted) A Parameter Symbol Limit Unit Drain-source Voltage VDS 50 V Gate-source Voltage VGS 20 V TA=25 @ Steady State 340 Drain Current ID mA TA=70 @ Steady State 272 Pulsed Drain Current A IDM 1.5 A Total Power Dissipation @ TA=25 PD 350 mW Thermal Resistance Junction-to-Ambient @ St... See More ⇒
Keywords - ALL TRANSISTORS SPECS
bss138.pdf Design, MOSFET, Power
bss138.pdf RoHS Compliant, Service, Triacs, Semiconductor
bss138.pdf Database, Innovation, IC, Electricity
