View bss138 datasheet:

RoHS COMPLIANT BSS138 N-Channel Enhancement Mode Field Effect Transistor Product Summary V 50V DS I 340mA D R ( at V =10V) 2.5ohm DS(ON) GS R ( at V =4.5V) 3.0ohm DS(ON) GSGeneral Description Trench Power MV MOSFET technology Voltage controlled small signal switch Low input Capacitance Fast Switching Speed Low Input / Output Leakage Applications Battery operated systems Solid-state relays Direct logic-level interfaceTTL/CMOS Absolute Maximum Ratings (T =25unless otherwise noted) A Parameter Symbol Limit UnitDrain-source Voltage VDS 50 VGate-source Voltage VGS 20 V TA=25 @ Steady State 340 Drain Current ID mA TA=70 @ Steady State 272 Pulsed Drain Current A IDM 1.5 A Total Power Dissipation @ TA=25 PD 350 mW Thermal Resistance Junction-to-Ambient @ St

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