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View s8550 s8550-l s8550-h s8550-j detailed specification:

S8550 SOT-23 PNP Transistors 3 2 1.Base 2.Emitter Features 1 3.Collector Collector current IC-=0.5A Simplified outline(SOT-23) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC -0.5 A Collector Power Dissipation PC 0.3 W Junction Temperature Tj 150 Storage Temperature Tstg -55 to 150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditions Min Typ Max Unit Collector-base breakdown voltage VCBO IC=-100 A, IE=0 -40 V Collector-emitter breakdown voltage VCEO IC=-1mA, IB=0 -25 V Emitter-base breakdown voltage VEBO IE=-100 A, IC=0 -5 V Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 A Collector cut-off current ICEO VCE=-20V, IB=0 -1 A Emitter cut-off current IEBO VEB=-3V, IC=0 -0.1 A VCE=-1V, IC=-50... See More ⇒

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