View bd142 detailed specification:
BD142 NPN SILICON TRANSISTOR POWER LINERAR AND SWITCHING APPLICATIONS LF Large Signal Power Amplification Low Saturation Voltage High Dissipation Rating Intended for a wide variety of intermediate-power applications. It is especially suited for use in audio and inverter circuits at 12 volts. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCEO Collector-Emitter Voltage 45 V VCBO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V VCEX Collector-Emitter Voltage VBE=-1.5 V 50 V IC Collector Current 15 A IB Base Current 7 A PT Power Dissipation @ TC = 25 117 Watts TJ Junction Temperature -65 to +200 C TS Storage Temperature COMSET SEMICONDUCTORS 1/3 BD142 THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-C Thermal Resistance, Junction to Case 1.5 C/W ELECTRICAL CHARACTERISTICS TC=25 C unless otherwise noted Test Con... See More ⇒
Keywords - ALL TRANSISTORS SPECS
bd142.pdf Design, MOSFET, Power
bd142.pdf RoHS Compliant, Service, Triacs, Semiconductor
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