View bd142 datasheet:

BD142 NPN SILICON TRANSISTOR POWER LINERAR AND SWITCHING APPLICATIONSLF Large Signal Power Amplification Low Saturation Voltage High Dissipation Rating Intended for a wide variety of intermediate-power applications. It is especially suited for use in audio and inverter circuits at 12 volts. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value UnitVCEO Collector-Emitter Voltage 45 VVCBO Collector-Emitter Voltage 50 VVEBO Emitter-Base Voltage 7 VVCEX Collector-Emitter Voltage VBE=-1.5 V 50 VIC Collector Current 15 A IB Base Current 7 A PT Power Dissipation @ TC = 25 117 WattsTJ Junction Temperature -65 to +200 C TS Storage Temperature COMSET SEMICONDUCTORS 1/3 BD142 THERMAL CHARACTERISTICS Symbol Ratings Value UnitRthJ-C Thermal Resistance, Junction to Case 1.5 C/WELECTRICAL CHARACTERISTICS TC=25C unless otherwise noted Test Con

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