View bd142 datasheet:
BD142 NPN SILICON TRANSISTOR POWER LINERAR AND SWITCHING APPLICATIONSLF Large Signal Power Amplification Low Saturation Voltage High Dissipation Rating Intended for a wide variety of intermediate-power applications. It is especially suited for use in audio and inverter circuits at 12 volts. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value UnitVCEO Collector-Emitter Voltage 45 VVCBO Collector-Emitter Voltage 50 VVEBO Emitter-Base Voltage 7 VVCEX Collector-Emitter Voltage VBE=-1.5 V 50 VIC Collector Current 15 A IB Base Current 7 A PT Power Dissipation @ TC = 25 117 WattsTJ Junction Temperature -65 to +200 C TS Storage Temperature COMSET SEMICONDUCTORS 1/3 BD142 THERMAL CHARACTERISTICS Symbol Ratings Value UnitRthJ-C Thermal Resistance, Junction to Case 1.5 C/WELECTRICAL CHARACTERISTICS TC=25C unless otherwise noted Test Con
Keywords - ALL TRANSISTORS DATASHEET
bd142.pdf Design, MOSFET, Power
bd142.pdf RoHS Compliant, Service, Triacs, Semiconductor
bd142.pdf Database, Innovation, IC, Electricity



LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
irfz44n | irf3205 | irfz44n datasheet | 2n4401 | bc547 transistor | bd139 | 2n4401 datasheet