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Spec. No. C306A3-T "BTA1015A3" Issued Date 2003.08.26 CYStech Electronics Corp. Revised Date Page No. 1/4 General Purpose PNP Epitaxial Planar Transistor BTA1015A3 Description The BTA1015A3 is designed for use in driver stage of AF amplifier and general purpose amplification. High voltage and high current V =-50V(min), I =-150mA(max) CEO C High HFE and excellent linearity Complementary to BTC1815A3. Symbol Outline BTA1015A3 TO-92 B Base C Collector E Emitter E C B Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V Collector Current IC -150 mA Base Current IB -50 mA Power Dissipation Pd 400 mW Thermal Resistance, Junction to Ambient R JA 250 C/W Junction Temperature Tj 12... See More ⇒

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