View bta1015a3 datasheet:

Spec. No. : C306A3-T "BTA1015A3" Issued Date : 2003.08.26 CYStech Electronics Corp. Revised Date : Page No. : 1/4 General Purpose PNP Epitaxial Planar Transistor BTA1015A3Description The BTA1015A3 is designed for use in driver stage of AF amplifier and general purpose amplification. High voltage and high current : V =-50V(min), I =-150mA(max) CEO C High HFE and excellent linearity Complementary to BTC1815A3. Symbol Outline BTA1015A3TO-92 BBase CCollector EEmitter E C B Absolute Maximum Ratings (Ta=25C) Parameter Symbol Limits UnitCollector-Base Voltage VCBO -50 VCollector-Emitter Voltage VCEO -50 VEmitter-Base Voltage VEBO -5 VCollector Current IC -150 mABase Current IB -50 mAPower Dissipation Pd 400 mW Thermal Resistance, Junction to Ambient RJA 250 C/W Junction Temperature Tj 12

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