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View btd882i3 detailed specification:

Spec. No. C848I3-H Issued Date 2003.04.02 CYStech Electronics Corp. Revised Date 2010.11.05 Page No. 1/6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 30V IC 3A BTD882I3 RCESAT 125m typ. Features Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772I3 RoHS compliant package Symbol Outline BTD882I3 TO-251 B Base C Collector B C E Emitter B C E Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 5 V IC(DC) 3 A Collector Current IC(Pulse) 7 *1 A Pd(Ta=25 ) 1 Power Dissipation W Pd(Tc=25 ) 10 Junction Temperature Tj 150 C Storage Temperature Tstg -55 +150 C Note *1. Single Pulse Pw 350 s,Duty 2%. BTD882I3 CYStek Pro... See More ⇒

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