View btd882i3 datasheet:

Spec. No. : C848I3-H Issued Date : 2003.04.02 CYStech Electronics Corp.Revised Date : 2010.11.05 Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 30V IC 3ABTD882I3 RCESAT 125m typ.Features Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772I3 RoHS compliant package Symbol OutlineBTD882I3 TO-251 BBase CCollector B C EEmitter B C E Absolute Maximum Ratings (Ta=25C) Parameter Symbol Limit UnitCollector-Base Voltage VCBO 40 VCollector-Emitter Voltage VCEO 30 VEmitter-Base Voltage VEBO 5 VIC(DC) 3 ACollector Current IC(Pulse) 7 *1 A Pd(Ta=25) 1Power Dissipation W Pd(Tc=25) 10Junction Temperature Tj 150 C Storage Temperature Tstg -55~+150 C Note : *1. Single Pulse Pw350s,Duty2%. BTD882I3 CYStek Pro

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