View bc549b-c bc550b-c detailed specification:
Low Noise Transistors BC549B,C NPN Silicon BC550B,C MAXIMUM RATINGS Rating Symbol BC549 BC550 Unit Collector Emitter Voltage VCEO 30 45 Vdc Collector Base Voltage VCBO 30 50 Vdc Emitter Base Voltage VEBO 5.0 Vdc Collector Current Continuous IC 100 mAdc 1 Total Device Dissipation @ TA = 25 C PD 625 mW 2 Derate above 25 C 5.0 mW/ C 3 Total Device Dissipation @ TC = 25 C PD 1.5 Watt CASE 29 04, STYLE 17 Derate above 25 C 12 mW/ C TO 92 (TO 226AA) Operating and Storage Junction TJ, Tstg 55 to +150 C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit COLLECTOR 1 Thermal Resistance, Junction to Ambient RqJA 200 C/W Thermal Resistance, Junction to Case RqJC 83.3 C/W 2 BASE 3 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Coll... See More ⇒
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