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View bc337 bc338 detailed specification:

BC337/338 Switching and Amplifier Applications Suitable for AF-Driver stages and low power output stages Complement to BC327/BC328 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage BC337 50 V BC338 30 V VCEO Collector-Emitter Voltage BC337 45 V BC338 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 800 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 C TSTG Storage Temperature -55 150 C Electrical Characteristics Ta=25 C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCEO Collector-Emitter Breakdown Voltage IC=10mA, IB=0 BC337 45 V BC338 25 V BVCES Collector-Emitter Breakdown Voltage IC=0.1mA, VBE=0 BC337 50 V BC338 30 V BVE... See More ⇒

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