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BC337/338Switching and Amplifier Applications Suitable for AF-Driver stages and low power output stages Complement to BC327/BC328TO-9211. Collector 2. Base 3. EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCES Collector-Emitter Voltage : BC337 50 V: BC338 30 VVCEO Collector-Emitter Voltage: BC337 45 V: BC338 25 VVEBO Emitter-Base Voltage 5 VIC Collector Current (DC) 800 mAPC Collector Power Dissipation 625 mWTJ Junction Temperature 150 CTSTG Storage Temperature -55 ~ 150 CElectrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. UnitsBVCEO Collector-Emitter Breakdown Voltage IC=10mA, IB=0: BC337 45 V: BC338 25 VBVCES Collector-Emitter Breakdown Voltage IC=0.1mA, VBE=0: BC337 50 V: BC338 30 VBVE