All Transistors. Datasheet

 

View bc556 bc557 bc558 bc559 bc560 datasheet:

bc556_bc557_bc558_bc559_bc560bc556_bc557_bc558_bc559_bc560

BC556/557/558/559/560 Switching and Amplifier High Voltage BC556, VCEO= -65V Low Noise BC559, BC560 Complement to BC546 ... BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BC556 -80 V BC557/560 -50 V BC558/559 -30 V VCEO Collector-Emitter Voltage BC556 -65 V BC557/560 -45 V BC558/559 -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -100 mA PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 C TSTG Storage Temperature -65 150 C Electrical Characteristics Ta=25 C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units ICBO Collector Cut-off Current VCB= -30V, IE=0 -15 nA hFE DC Current Gain VCE= -5V, IC=2mA 110 800 VCE Collector-Emit... See More ⇒

 

Keywords - ALL TRANSISTORS DATASHEET

 bc556 bc557 bc558 bc559 bc560.pdf Design, MOSFET, Power

 bc556 bc557 bc558 bc559 bc560.pdf RoHS Compliant, Service, Triacs, Semiconductor

 bc556 bc557 bc558 bc559 bc560.pdf Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.