Скачать даташит для bc556_bc557_bc558_bc559_bc560:

BC556/557/558/559/560Switching and Amplifier High Voltage: BC556, VCEO= -65V Low Noise: BC559, BC560 Complement to BC546 ... BC 550TO-9211. Collector 2. Base 3. EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage : BC556 -80 V: BC557/560 -50 V: BC558/559 -30 VVCEO Collector-Emitter Voltage: BC556 -65 V: BC557/560 -45 V: BC558/559 -30 VVEBO Emitter-Base Voltage -5 VIC Collector Current (DC) -100 mAPC Collector Power Dissipation 500 mWTJ Junction Temperature 150 CTSTG Storage Temperature -65 ~ 150 CElectrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. UnitsICBO Collector Cut-off Current VCB= -30V, IE=0 -15 nAhFE DC Current Gain VCE= -5V, IC=2mA 110 800VCE Collector-Emit