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October 2006 TM UniFET FDA18N50 500V N-Channel MOSFET Features Description 19A, 500V, RDS(on) = 0.265 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 45 nC) stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the avalanche Improved dv/dt capability and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D G TO-3P FDA Series G D S S Absolute Maximum Ratings Symbol Parameter FDA18N50 Unit VDSS Drain-Source Voltage 500 V ID Drain Current - Continuous (TC =... See More ⇒

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