All Transistors. Datasheet

 

View fda18n50 datasheet:

fda18n50fda18n50

October 2006TMUniFETFDA18N50500V N-Channel MOSFETFeatures Description 19A, 500V, RDS(on) = 0.265 @VGS = 10 V These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 45 nC)stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche testedperformance, and withstand high energy pulse in the avalanche Improved dv/dt capabilityand commutation mode. These devices are well suited for highefficient switched mode power supplies and active power factorcorrection.DGTO-3PFDA SeriesG D S SAbsolute Maximum RatingsSymbol Parameter FDA18N50 UnitVDSS Drain-Source Voltage 500 VID Drain Current - Continuous (TC =

 

Keywords - ALL TRANSISTORS DATASHEET

 fda18n50.pdf Design, MOSFET, Power

 fda18n50.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fda18n50.pdf Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.