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January 2005 FDD306P P-Channel 1.8V Specified PowerTrench MOSFET Features Applications 6.7 A, 12 V. RDS(ON) = 28 m @ VGS = 4.5 V DC/DC converter RDS(ON) = 41 m @ VGS = 2.5 V RDS(ON) = 90 m @ VGS = 1.8 V General Description Fast switching speed This P-Channel 1.8V Specified MOSFET uses Fairchild s High performance trench technology for extremely advanced low voltage PowerTrench process. It has been opti- low RDS(ON) mized for battery power management. High power and current handling capability S D G G S TO-252 D Absolute Maximum Ratings TA=25 C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 12 V VGSS Gate-Source Voltage 8V ID Drain Current Continuous (Note 3) 6.7 A Pulsed (Note 1a) 54 PD Power Dissipation for Single Operation (Note 1) 52 W (Note 1a) 3.... See More ⇒

 

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