View fdd306p datasheet:

January 2005FDD306PP-Channel 1.8V Specified PowerTrench MOSFET Features Applications 6.7 A, 12 V. RDS(ON) = 28 m @ VGS = 4.5 V DC/DC converter RDS(ON) = 41 m @ VGS = 2.5 V RDS(ON) = 90 m @ VGS = 1.8 VGeneral Description Fast switching speedThis P-Channel 1.8V Specified MOSFET uses Fairchilds High performance trench technology for extremely advanced low voltage PowerTrench process. It has been opti-low RDS(ON) mized for battery power management. High power and current handling capabilitySDGGSTO-252DAbsolute Maximum Ratings TA=25C unless otherwise notedSymbol Parameter Ratings UnitsVDSS Drain-Source Voltage 12 VVGSS Gate-Source Voltage 8VID Drain Current Continuous (Note 3) 6.7 A Pulsed (Note 1a) 54PD Power Dissipation for Single Operation (Note 1) 52 W(Note 1a) 3.

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